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MIT Virtual-Source Model

By Xingshu Sun1, Xufeng Wang1, Yubo Sun1, Mark Lundstrom1

1. Purdue University

Virtual Source Model for MOSFET compact modeling

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Archive Version 1.0
Published on 06 Nov 2012
Latest version: 1.2. All versions

doi:10.4231/D3MS3K127 cite this

This tool is closed source.

NEEDS: Nano-Engineered Electronic Device Simulation Node

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This tool is a 1-D simulator designed especially for short-channel FETs. It utilizes a physics-based compact FET model, referred to as the MIT virtual-source (VS) model. The VS model contains sixteen parameters, eleven of which can be directly obtained from measurements. Therefore, the VS model contains only five fit parameters. After entering required parameters, users can plot ID vs. VGS and ID vs. VDS both in linear and logarithm coordinates.



Purdue University

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.