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You are here: ResourcesCoursesComputational ElectronicsAbout

Computational Electronics

By Dragica Vasileska

Arizona State University

Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical …

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Abstract

Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet and it also gives unique insight into the device behavior by allowing the observation of phenomena that can not be measured on real devices. The of this class is to introduce the students to all semi-classical semiconductor device modeling techniques that are implemented in either commercial or publicly available software. As such, it should help students to understand when one can use drift-diffusion model and when it is necessary to use hydrodynamic, lattice heating, and even particle-based simulations. A short tutorial on using the Silvaco/PADRE simulation software is included and its purpose is to make users familiar with the syntax used in almost all commercial device simulation software.

Cite this work

Researchers should cite this work as follows:

  • Dragica Vasileska (2006), "Computational Electronics," http://nanohub.org/resources/1500.

    BibTex | EndNote

Tags
  1. ACUTE
  2. nanoelectronics
  3. Simulation1

Supporting Documents

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Lecture Number/Topic Breeze Video Lecture Notes (PDF) Supplemental Material Suggested Exercises
Introduction to Computational Electronics
What Is Computational Electronics and Why Do We Need It?
View Notes Supplemental material
Simplified Band-Structure Model
Solid-State Theory and Semiconductor Transport Fundamentals
View Notes Simplified Band-Structure Carrier Dynamics
Empirical Pseudopotential Method Description
Solid-State Theory and Semiconductor Transport Fundamentals
View Notes Empirical Pseudopotential Method Description
Choice of the Distribution Function
Solid-State Theory and Semiconductor Transport Fundamentals
View Notes Choice of the Distribution Function
Fermi Golden Rule
Relaxation-Time Approximation
Solid-State Theory and Semiconductor Transport Fundamentals
Relaxation-Time Approximation
Scattering Mechanisms
Solid-State Theory and Semiconductor Transport Fundamentals
Notes
Numerical Analysis View Notes Numerical Analysis
Numerical Analysis Problems
Drift-Diffusion Model, Part A: Introduction
Drift-Diffusion Model
View Notes Part A: Introduction
Drift-Diffusion Model, Part B: Solution Details
Drift-Diffusion Model
View Notes Part B: Solution Details
Drift-Diffusion Model, Part C: Sharfetter-Gummel, Time-Dependent Simulations
Drift-Diffusion Model
View Notes Part C: Sharfetter-Gummel, Time-Dependent Simulations
Drift-Diffusion Model, Mobility Modeling
Drift-Diffusion Model
View Notes Mobility Modeling
Introduction to DD Modeling with PADRE
Silvaco/PADRE Description and Application to Device Simulation
View Notes Introduction to DD Modeling with PADRE
Introduction to Silvaco Simulation Software
Silvaco/PADRE Description and Application to Device Simulation
View Notes
MOS Capacitors: Description and Semiclassical Simulation With PADRE
Introduction of Quantum-Mechanical Effects in Device Simulation
View Notes
What is CMOS Technology Facing?
Introduction of Quantum-Mechanical Effects in Device Simulation
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