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NanoMOS 3.0: First-Time User Guide

By Kurtis Cantley1, Mark Lundstrom1

1. Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the user understand the capabilities of the tool. These examples include semiclassical and NEGF simulations of thin-body double-gated n-MOSFETs, with local density of states and I-V characteristic outputs.

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Researchers should cite this work as follows:

  • Kurtis Cantley; Mark Lundstrom (2006), "NanoMOS 3.0: First-Time User Guide,"

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.