NanoMOS 3.0: First-Time User Guide

By Kurtis Cantley1, Mark Lundstrom1

1. Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the user understand the capabilities of the tool. These examples include semiclassical and NEGF simulations of thin-body double-gated n-MOSFETs, with local density of states and I-V characteristic outputs.

Cite this work

Researchers should cite this work as follows:

  • Kurtis Cantley; Mark Lundstrom (2006), "NanoMOS 3.0: First-Time User Guide," http://nanohub.org/resources/1533.

    BibTex | EndNote

Time

Tags