Negative differential drift velocity in wurtzite GaN has been verified experimentally, yet in spite of the wealth of documented theoretical investigations of GaN-based Gunn diodes, not a single such device has yet been demonstrated. The likelihood of realizing GaN-based k-space transfer devices is reassessed in light of recent theoretical modeling. A new physical mechanism is proposed for the generation of dipole instabilities in wurtzite III-nitride materials, entirely unrelated to the Gunn effect. State-of-the art numerical simulation demonstrates the direct generation of millimeter-wave signals exploiting traveling dipole domains in the plane of a polar heterojunction upon which a simple triode structure is superimposed.

"Dr. Yoder's interests include the physics of semiconductor opto-, micro- and nanoelectronic devices and structures, as well as RF testing and characterization. Recent and ongoing work includes calculations of electroluminescence in thin tunnel-MOS devices, quasi-unipolar photodetection, wide bandgap semiconductor devices, and quantum charge transport simulation.

P. D. Yoder received the B.S.E.E. degree from Cornell University, Ithaca, NY in 1989, and the M.S. and Ph.D. degrees from the University of Illinois, Urbana-Champaign, in 1991 and 1993, respectively. Upon graduation, he accepted a research position with the Swiss Federal Institute of Technology in Zurich, Switzerland. He subsequently worked as a Member of Technical Staff at Bell Laboratories in Murray Hill, New Jersey, and then with its micro-/opto-electronics spin-off, Agere Systems. Dr. Yoder joined the faculty of Georgia Tech in Fall 2003. "
-Taken from Dr. Yoder's Faculty page.

Department of Electrical and Computer Engineering at the University of Illinois, Urbana-Champaign (ECE)