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Engineering Disorder in Opto-Electronics

By Jacob B. Khurgin

Electrical and Computer Engineering, Johns Hopkins Univeristy, Baltimore, MD

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Abstract

GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown that it is most probably due to hot longitudinal optical phonons effect. Then it will be demonstrated that introducing a certain degree of alloy or isotope disorder can mitigate hot phonon effects and improve performance of GaN transistors.

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Researchers should cite this work as follows:

  • Jacob B. Khurgin (2012), "Engineering Disorder in Opto-Electronics," http://nanohub.org/resources/16043.

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203 Physics, Purdue Universtiy, West Lafayette, IN

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