Recent years have seen a surge of interest in the graphene which has been touted as a future material of choice for a dazzlingly wide range of applications based on the array of properties thought to be unique to graphene: Dirac-like dispersion with large Fermi velocity, chirality, pseudo-spin, forbidden backscattering, and others. In this talk we show that many heterostructures based on III-V (InGaSb) and II-VI (HgCdTe) semiconductors can be engineered to have all the above properties nearly indistinguishable from those of graphene, while adding certain degree of versatility, such as ability to have not only 2-dimensional, but also 3-dimensional and 1-dimensional structures with graphene-like properties. This may be important for many applications, and in this talk we shall concentrate on the ones in plasmonics and metamaterials.
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