Analyzes device reliability based on NBTI

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Archive Version 1.1
Published on 12 Feb 2008, unpublished on 19 Oct 2009 All versions

doi:10.4231/D35X25C2Q cite this



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DevRel contains a demonstration of Negative Bias Temperature Instability (NBTI), which is a major reliability issue for nanoscale MOS devices. When a device is stressed at negative voltage, depassivation of SiH bonds in the interface occurs. As a result, interface traps are generated (reaction) and the resulting hydrogen species diffuses away from the interface (diffusion). Hence, device characteristics (threshold voltage, mobility, drain current, etc) degrades with time and such degradation satisfies a power law (~ time^n) formula.

Implementing such Reaction-diffusion (RD) model, DevRel shows how threshold voltage of a PMOS device can change with time at different voltages and temperatures.


Thanks to the following people for their contributions to this work:

Dhanoop Varghese ... Experiment
Souvik Mahapatra ... Experiment

This work was supported by NCN, NSF, and SRC.

Cite this work

Researchers should cite this work as follows:

  • "A Comprehensive Model for PMOS NBTI Degradation," M. A. Alam and S. Mahapatra, Special Issue of Journal of Microelectronics Reliability (Invited), 45(1), pp. 71-81,(2005).

  • Ahmad Ehteshamul Islam; HALDUN KUFLUOGLU; Muhammad A. Alam (2014), "DevRel," (DOI: 10.4231/D35X25C2Q).

    BibTex | EndNote


  1. nanoelectronics
  2. nanoelectronics
  3. nanoelectronics
  4. microelectronics
  5. microelectronics
  6. microelectronics
  10. reliability
  11. reliability
  12. reliability
  13. NBTI