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Device Reliability Tool

By Ahmad Ehteshamul Islam1, HALDUN KUFLUOGLU2, Muhammad A. Alam2

1. Air Force Research Laboratory 2. Purdue University

Analyzes device reliability based on NBTI

Launch Tool

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Archive Version 1.1.1
Published on 19 Oct 2009
Latest version: 2.1. All versions

doi:10.4231/D3183424T cite this

This tool is closed source.



Published on


DevRel contains a demonstration of Negative Bias Temperature Instability (NBTI), which is a major reliability issue for nanoscale MOS devices. When a device is stressed at negative voltage, depassivation of SiH bonds in the interface occurs. As a result, interface traps are generated (reaction) and the resulting hydrogen species diffuses away from the interface (diffusion). Hence, device characteristics (threshold voltage, mobility, drain current, etc) degrades with time and such degradation satisfies a power law (~ time^n) formula.

Implementing such Reaction-diffusion (RD) model, DevRel shows how threshold voltage of a PMOS device can change with time at different voltages and temperatures.

Negative Bias Temperature Instability Basics/Modeling

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.