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Modeling Interface-defect Generation (MIG)

Analyzes device reliability based on NBTI

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Archive Version 2.0
Published on 08 Mar 2010
Latest version: 2.1. All versions

doi:10.4231/D30G3GX8V cite this

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Abstract

MIG contains a demonstration of Negative Bias Temperature Instability (NBTI), which is a major reliability issue for nanoscale MOS devices. When a device is stressed at negative voltage, depassivation of SiH bonds in the interface occurs. As a result, interface traps are generated (reaction) and the resulting hydrogen species diffuses away from the interface (diffusion). Hence, device characteristics (threshold voltage, mobility, drain current, etc) degrades with time and such degradation satisfies a power law (~ time^n) formula.

Implementing such Reaction-diffusion (RD) model, MIG shows how threshold voltage of a PMOS device can change with time at different voltages and temperatures.


Negative Bias Temperature Instability Basics/Modeling

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