Support

Support Options

Submit a Support Ticket

 

Intro to MOS-Capacitor Tool

By Emmanuel Jose Ochoa1, Stella Quinones1

1. University of Texas at El Paso

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

Launch Tool

You must login before you can run this tool.

Version 1.5 - published on 11 Aug 2014

doi:10.4231/D3BG2HB3Z cite this

This tool is closed source.

View All Supporting Documents

See also

No results found.

Category

Tools

Published on

Abstract

Use the Intro to MOS-C tool to model the device physics and electrostatic variables as a function of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p- type). The relationship between flatband voltage, threshold voltage, maximum depletion width and maximum surface potential can be emphasized by instructor assignment design.

Powered by

NCN UTEP Research Team

Sponsored by

The University of Texas at El Paso On-Campus Student Employment Program

References

C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Upper Saddle River, NJ: Pearson, 2010.

Cite this work

Researchers should cite this work as follows:

  • Emmanuel Jose Ochoa; Stella Quinones (2014), "Intro to MOS-Capacitor Tool," http://nanohub.org/resources/mosctool. (DOI: 10.4231/D3BG2HB3Z).

    BibTex | EndNote

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.