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Intro to MOS-Capacitor Tool
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.
Use the Intro to MOS-C tool to model the device physics and electrostatic variables as a function of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p- type). The relationship between flatband voltage, threshold voltage, maximum depletion width and maximum surface potential can be emphasized by instructor assignment design.
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