Intro to MOS-Capacitor Tool

By Emmanuel Jose Ochoa1, Stella Quinones1

1. University of Texas at El Paso

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

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Version 1.5 - published on 11 Aug 2014

doi:10.4231/D3BG2HB3Z cite this

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Usage

World usage

Location of all "Intro to MOS-Capacitor Tool" Users Since Its Posting

Simulation Users

229

7 16 23 29 35 38 44 50 56 67 79 82 91 96 100 102 108 116 123 136 140 145 158 160 163 166 169 174 182 184 192 197 205 211 214 216 219 229

Users By Organization Type
Type Users
Unidentified 134 (58.52%)
Educational - University 87 (37.99%)
Industry 6 (2.62%)
National Lab 1 (0.44%)
Government Agency 1 (0.44%)
Users by Country of Residence
Country Users
us UNITED STATES 28 (35.44%)
in INDIA 27 (34.18%)
eg EGYPT 4 (5.06%)
cn CHINA 4 (5.06%)
bd BANGLADESH 3 (3.8%)
il ISRAEL 3 (3.8%)
ru RUSSIAN FEDERATION 3 (3.8%)
es SPAIN 3 (3.8%)
mx MEXICO 2 (2.53%)
sg SINGAPORE 2 (2.53%)

Simulation Runs

782

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Overview
Average Total
Wall Clock Time 5.73 hours 89.82 days
CPU time 6.73 seconds 42.15 minutes
Interaction Time 1.77 hours 27.69 days