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Intro to MOS-Capacitor Tool

By Emmanuel Jose Ochoa

University of Texas at El Paso

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

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Version 1.0 - published on 23 Jul 2013

doi:10.4231/D3DF6K35D cite this

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Usage

World usage

Location of all "Intro to MOS-Capacitor Tool" Users Since Its Posting

Simulation Users

86

7 16 25 31 37 40 46 52 58 69 81 84 86

Users By Organization Type
Type Users
Unidentified 40 (46.51%)
Educational - University 40 (46.51%)
Industry 4 (4.65%)
Government Agency 1 (1.16%)
National Lab 1 (1.16%)
Users by Country of Residence
Country Users
us UNITED STATES 15 (37.5%)
in INDIA 11 (27.5%)
cn CHINA 2 (5%)
sg SINGAPORE 2 (5%)
eg EGYPT 2 (5%)
bd BANGLADESH 2 (5%)
ru RUSSIAN FEDERATION 2 (5%)
es SPAIN 2 (5%)
il ISRAEL 1 (2.5%)
lt LITHUANIA 1 (2.5%)

Simulation Runs

398

132 151 171 179 190 197 210 222 233 280 350 375 398
Overview
Average Total
Wall Clock Time 5.81 hours 44.06 days
CPU time 7.19 seconds 21.81 minutes
Interaction Time 26.46 minutes 3.34 days

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