ECE 695A Lecture 7R: Review Questions

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

Review Questions:

  1. Why are there more types of defects in crystals than in amorphous material?
  2. From the perspective of Maxwell’s relation, how does H reduce defect density?
  3. Why is HfO2 so defective --- and why do you want to use it?
  4. Which type of traps involve faster trapping/detrapping, Pb center or E’ centers?
  5. Effect of trapping is more significant for thick oxide than thin oxides. Explain.
  6. Even for the same integrated N content and same total number of defects, PNO performs better than TNO. Can you explain why?
  7. If you find Q(t)=A log(t), what type of noise-spectra do you expect?
  8. What about Q(t) ~ (1-exp(-a*t)), what is the noise spectra?
  9. Random telegraph noise is most visible close to the threshold. Explain why.

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 7R: Review Questions," http://nanohub.org/resources/16615.

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Time

Location

EE 226, Purdue University, West Lafayette, IN

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