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ECE 695A Lecture 8R: Review Questions

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

  1. What is the distinction between BTI and NBTI phenomena?
  2. What does it mean that a process is thermally activated?
  3. What is the difference between parametric failure and catastrophic failure? Give examples.
  4. What are the time-characteristics of trapping, BTI, and NBTI?
  5. Which device will have poorer NBTI characteristics: buried channel PFET or surface channel PFET?
  6. Under what condition can NBTI occur for NMOS?
  7. Cite two experiments to support the assertion that NBTI is a interface-related reliability issue?

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 8R: Review Questions," http://nanohub.org/resources/16666.

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Time

Location

EE 226, Purdue University, West Lafayette, IN

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