1. Both SiH and SiO are involved in HCI degradation. Give two evidences.
2. Why doesn’t HCI occur during NBTI stress condition?
3. I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal curve.
4. What is the physical origin of distribution of bond-strengths for SiO bonds?
5. Why is it that SiH bonds are easily repassivated, while SiO bond are not. What can you do to repassivate these bonds?
6. HCI is a bigger problem for NMOS compared to PMOS – what could be the reason.
7. Why did people expect HCI to disappear below 1V?

Researchers should cite this work as follows:

• Muhammad A. Alam (2013), "ECE 695A Lecture 13R: Review Questions," https://nanohub.org/resources/16888.

1. course lecture
2. HCI
3. MOS
4. nanoelectronics
5. nanotransistors
6. NBTI
7. reliability