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You are here: ResourcesCoursesECE 612 Nanoscale Transistors (Fall 2006)About

ECE 612 Nanoscale Transistors (Fall 2006)

By Mark Lundstrom

Purdue University, West Lafayette

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.

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Licensed under Creative Commons according to this deed.

Abstract

Please Note: An updated version of this course is in production for Fall 2008. Lectures will be made available as they are produced.

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.

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Researchers should cite this work as follows:

  • Mark Lundstrom (2006), "ECE 612 Nanoscale Transistors (Fall 2006)," http://nanohub.org/resources/1705.

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Tags
  1. ballistic transport
  2. devices
  3. nanoelectronics
  4. nanotransistors

Supporting Documents

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Lecture Number/Topic Breeze Video Lecture Notes (PDF) Supplemental Material Suggested Exercises
ECE 612 Introductory Lecture (Fall 06) View Notes
ECE 612 Lecture 1: MOSFET Review View Notes
ECE 612 Lecture 2: Introduction to Device Simulation View Notes
ECE 612 Lecture 3: 1D MOS Electrostatics View Notes
ECE 612 Lecture 4: MOS Capacitors View Notes
ECE 612 Lecture 5: Poly Si Gate MOS Capacitors View Notes
ECE 612 Lecture 6: Quantum Mechanical Effects View Notes
ECE 612 Lecture 7: MOSFET IV, Part I View Notes
ECE 612 Lecture 8: MOSFET IV, Part II View Notes
ECE 612 Lecture 9: MOSFET IV, Part III View Notes
ECE 612 Lecture 10: The Ballistic MOSFET View Notes
ECE 612 Lecture 11: The Quasi-ballistic MOSFET View Notes
ECE 612 Lecture 12: Subthreshold Conduction View Notes
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances View Notes
ECE 612 Lecture 14: Effective Mobility View Notes
ECE 612 Lecture 15: 2D Electrostatics, Part I View Notes
ECE 612 Lecture 16: 2D Electrostatics, Part II View Notes
The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects …
View View Notes
ECE 612 Lecture 17: Device Scaling View Notes
ECE 612 Lecture 18: VT Engineering View Notes
ECE 612 Lecture 19: Series Resistance View Notes
ECE 612 Lecture 20: MOSFET Leakage View Notes
ECE 612 Lecture 21: Gate resistance and Interconnects View Notes
ECE 612 Lecture 22: CMOS Process Steps View Notes
ECE 612 Lecture 23: CMOS Process Flow View Notes
ECE 612 Lecture 24: CMOS Circuits, Part I View Notes
ECE 612 Lecture 25: CMOS Circuits, Part I I View Notes
ECE 612 Lecture 26: CMOS Limits View Notes
ECE 612 Lecture 27: RF CMOS View Notes
ECE 612 Lecture 28: Overview of SOI Technology View Notes
ECE 612 Lecture 29: SOI Electrostatics View Notes
ECE 612 Lecture 30: UTB SOI Electrostatics View Notes
ECE 612 Lecture 31: Heterostructure Fundamentals View Notes
ECE 612 Lecture 32: Heterojunction Diodes View Notes
ECE 612 Lecture 33: Heterojunction Bipolar Transistors View Notes
ECE 612 Lecture 34: Heterostructure FETs View Notes

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