SPICE Model of Graphene Nanoribbon FETs (GNRFET)
Citations Non-affiliated (6) | Affiliated (0)
Non-affiliated authors
- C Venkataiah, Manjula Jayamma, Linga MK, Laith Alzubaidi, Mallikarjuna Y., Feroz Ahmed, (2023), "Performance Evaluation Of SRAM Design Using Different Field Effect Transistors", 4th International Conference on Design and Manufacturing Aspects for Sustainable Energy \ICMED-ICMPC 2023), E3S Web of Conferences, 391: pg: 1-1185, EDP Sciences, (DOI: https://doi.org/10.1051/e3sconf/202339101185)
- Zahra Rohani, Azadeh Emrani Zarandi, (2023), "A Power Efficient 32 Nm Ternary Multiplier Using Graphene Nanoribbon Field-Effect Transistor Technology", ECS Journal Of Solid State Science And Technology, 12, 5: pg: -, (DOI: DOI 10.1149/2162-8777/acd47c)
- Zaharah Johari, Zheng Tan, Muhammad Rasol, Afiq Hamzah, Michael Peng, Suhana Sultan, Nurul Alias, Suhaila Isaak, Yusmeeraz Yusoff, (2022), "Performance Comparison Of CMOS And NMOS GNRFET Full Adder", ELEKTRIKA-Journal Of Electrical Engineering, 21, 2: pg: 7-10, (DOI: https://doi.org/10.11113/elektrika.v21n2.347)
- Zarin Sandhie, Farid Ahmed, Masud Chowdhury, (2020), "GNRFET Based Ternary Logic--Prospects And Potential Implementation", 2020 IEEE 11th Latin American Symposium on Circuits & Systems \LASCAS), 2020 IEEE 11th Latin American Symposium on Circuits \& Systems \LASCAS), : pg: 1-4, IEEE, 978-1-7281-3427-7, (DOI: 10.1109/LASCAS45839.2020.9069028)
- Ying-Yu Chen, Morteza Gholipour, Deming Chen, (2016), "Flexible Transition Metal Dichalcogenide Field-effect Transistors: A Circuit-level Simulation Study Of Delay And Power Under Bending, Process Variation, And Scaling", Asia and South Pacific Design Automation Conference \ASP-DAC) , : pg: 761-768, 978-1-4673-9568-7, (DOI: 10.1109/ASPDAC.2016.7428103)
- Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen, (2015), "Analytical SPICE-Compatible Model Of Schottky-Barrier-Type GNRFETs With Performance Analysis", IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION \VLSI) SYSTEMS 1, : pg: 1-14, 1063-8210 (DOI: 10.1109/TVLSI.2015.2406734)