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ECE 695A Lecture 21R: Review Questions

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

Review Questions:

  1. What is the name of the failure distribution that we expect for thin oxides?
  2. For thin oxides, is PMOS or NMOS more of a concern in modern transistors?
  3. What is DBIE? When does it occur? Can the transistor be still functional ?
  4. In what ways is TDDB compare with NBTI and HCI time-degradation? Explain.
  5. Why do you suspect that hard breakdown destroys thick oxide, while in thin oxides breakdown can be soft?
  6. What is stress-induced leakage current? What is ‘stress-induced’ about it?

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 21R: Review Questions," http://nanohub.org/resources/17249.

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Time

Location

EE 226, Purdue University, West Lafayette, IN

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