ECE 695A Lecture 25R: Review Questions

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Review Questions:

  1. Explain why percolation resistance is area independent?
  2. Why is the physical origin of the distribution of percolation resistance?
  3. How would the ratio of hard and soft breakdown change with an auxiliary parallel capacitor in constant voltage stress? Explain.
  4. What is the evidence from HBD that a thermal process may be involved?
  5. In constant voltage stress, do you expect that BD would be harder for thicker oxide? Or does it not matter?
  6. How might people have missed SBD even for thin oxides where BD in operating condition is expected?
  7. Do you find a limitation of the SPICE like model used in the analysis?

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 25R: Review Questions ,"

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EE 226, Purdue University, West Lafayette, IN


  1. course lecture
  2. reliability
  3. nanoelectronics