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ECE 695A Lecture 30R: Review Questions

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

Outline:

  • What is the difference between extrinsic vs. intrinsic breakdown?
  • Does gas dielectric have extrinsic breakdown? Why or why not?
  • What does ESD damage and the plasma damage to thin oxides?
  • Can you explain the physical meaning of infant mortality ? How does it relate to yield of semiconductor manufacturing?
  • Can you reinterpret the Apgar tests in terms of infant mortality?
  • What is the difference between the Weibull for thick vs. thin oxides?

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 30R: Review Questions," http://nanohub.org/resources/17487.

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Time

Location

EE 226, Purdue University, West Lafayette, IN

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