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ECE 695A Lecture 37R: Review Questions

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

Review Questions:

  1. Why is SOI more radiation hard compared to bulk devices? What do you feel about radiation hardness of FINFET?
  2. What type of radiation issues could arise for thin-body devices like FINFET?
  3. What is error correction code? Why does it correct for MBU?
  4. What is the difference between SEE and SEU?
  5. What is ‘displacement damage’? What is its unit?
  6. What is LET? What are the two types of units used to describe LET?
  7. Explain the origin of the term Blackwall? What is the blackwall thickness.

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 37R: Review Questions," http://nanohub.org/resources/17639.

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Time

Location

EE 226, Purdue University, West Lafayette, IN

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