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ECE 695A Lecture 39-1R: Review Questions

By Muhammad Alam

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

Review Questions:

  1. What is the difference between hard and soft error?
  2. What is typical charge loss mechanism for ZRAM ?
  3. The soft error in Flash memory is different from that of ZRAM. Explain.
  4. How do people accelerate radiation induced damage?
  5. If carrier relaxation was faster than thermionic emission rate, would you expect soft errors in ZRAM or SRAM?
  6. What is that Geant software can do that traditional Monte Carlo software cannot?

Cite this work

Researchers should cite this work as follows:

  • Muhammad Alam (2013), "ECE 695A Lecture 39-1R: Review Questions," http://nanohub.org/resources/17736.

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Time

Location

EE 226, Purdue University, West Lafayette, IN

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