Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these transistors from 1000nm to 22nm. As this size approaches atomic limits, the research community is under pressure to find devices which complement CMOS and enable further improvement of performance of integrated circuits.
The course aims to familiarize the student with methods used to simulate and evaluate such devices. They fall into two large categories: quantum transport (Keldysh's Non-Equilibrium Green's functions, NEGF) and magnetization dynamics (Landau-Lifshitz-Gilbert equations, LLG). The lectures will describe fundamentals of these methods and examples of their use. Operation and simulation of a wide class of beyond CMOS devices, electronic and spintronic ones, is discussed. Finally, their use in integrated logic circuits and benchmarking of their performance are presented.
- CMOS Scaling
- Overview of beyond CMOS devices
- Introduction to the NEGF method
- Tunneling FET
- Graphene based devices
- Magnetoresistance and spin torque switching
- Magnetization Switching
- Magnetization Dynamics simulations with OOMMF
- Spin Torque Majority Gates
- Magnetoelectric switching
- Benchmarking of beyond CMOS devices
- Non-Boolean Computing
University of Pisa, Department of Information Engineering, Prof. Gianluca Fiori
DE Nikonov, IA Young, Overview of Beyond-CMOS Devices and A Uniform Methodology for Their Benchmarking, arXiv:1302.0244 [cond-mat.mes-hall]