In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-
on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the
non-equilibrium Green’s function equations self-consistently with Poisson’s equation, is based on
an expansion of the active device Hamiltonian in decoupled mode-space. Simulation results from
this method are benchmarked against solutions from a rigorous two-dimensional discretization of
the device Hamiltonian in real-space. While doing so, the inherent approximations, regime of va-
lidity and the computational efficiency of the mode-space solution are highlighted and discussed.
Additionally, quantum boundary conditions are rigorously derived and the effects of strong off-
equilibrium transport are examined. This paper shows that the decoupled mode-space solution is
an efficient and accurate simulation method for modeling electron transport in nanoscale, silicon-
Researchers should cite this work as follows:
R. Venugopal, Z. Ren, S. Datta, and M. S. Lundstrom, "Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approach,"
J. Appl. Phys., 92, 3730-3739, 2002.
Zhibin Ren; Supriyo Datta; Mark Lundstrom; Ramesh Venugopal; D. Jovanovic (2006), "Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches," http://nanohub.org/resources/1835.