Modeling Self-Heating Effects in SOI Devices and GaN HEMTs

By Dragica Vasileska

Arizona State University

Published on

Abstract

The role of self-heating effects is investigated in SOI devices and GaN HEMTs.

Cite this work

Researchers should cite this work as follows:

  • Dragica Vasileska (2013), "Modeling Self-Heating Effects in SOI Devices and GaN HEMTs," http://nanohub.org/resources/18428.

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