In recent years, tunnel field-effect transistors (TFETs) have attracted a great deal of attention for future nanoelectronics devices. The reason for the interest is that TFETs potentially enable a significant reduction of the power consumption of highly integrated circuits. However, to date most of the experimental demonstrations of TFETs exhibit a performance inferior to conventional MOSFETs. Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
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