Please help us continue to improve nanoHUB operation and service by completing our survey - http://bit.ly/nH-survey14. Thank you - we appreciate your time. close

Support

Support Options

Submit a Support Ticket

 

Device Physics and Simulation of Silicon Nanowire Transistors

By Jing Wang

Purdue University, West Lafayette, IN

Category

Papers

Published on

Abstract

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry and academia. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this thesis are: 1) to theoretically explore the essential physics of SNWTs (e.g., electrostatics, transport and bandstructure) by performing computer-based simulations, and 2) to assess the performance limits and scaling potentials of SNWTs and to address the SNWT design issues. A full three dimensional, self-consistent, ballistic SNWT simulator has been developed based on the effective-mass approximation with which we have evaluated the upper performance limits of SNWTs with various cross-sections (i.e., triangular, rectangular and cylindrical). The results show that SNWTs provide better scaling capability than planar MOSFETs. A microscopic, quantum treatment of surface roughness scattering (SRS) in SNWTs has also been accomplished, and it shows that SRS is less important in SNWTs with small diameters than in planar MOSFETs. Finally, bandstructure effects in SNWTs with small diameters have been examined by using an empirical tight binding model, and a channel orientation optimization has been done for both silicon and germanium nanowire fieldeffect transistors.

Bio

Jing Wang received his PhD at Purdue University in August 2005.

Cite this work

Researchers should cite this work as follows:

  • Jing Wang (2013), "Device Physics and Simulation of Silicon Nanowire Transistors," http://nanohub.org/resources/18740.

    BibTex | EndNote

Submitter

NEEDS NODE

Purdue University, West Lafayette, IN

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.