A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea of so-called Büttiker probes. The double gate device geometry
permits an efficient mode space approach that dramatically lowers the computational
burden and permits use as a design tool. Also implemented for comparison are a ballistic
solution of the Boltzmann Transport Equation and the drift-diffusion approaches. The
program is described and some examples of the use of nanoMOS for 10nm double gate
MOSFETs are presented.
Researchers should cite this work as follows:
Zhibin Ren; Ramesh Venugopal; Sebastien Goasguen; Supriyo Datta; Mark Lundstrom (2006), "nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs," http://nanohub.org/resources/1875.