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nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

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Abstract

A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that dramatically lowers the computational burden and permits use as a design tool. Also implemented for comparison are a ballistic solution of the Boltzmann Transport Equation and the drift-diffusion approaches. The program is described and some examples of the use of nanoMOS for 10nm double gate MOSFETs are presented.

Cite this work

Researchers should cite this work as follows:

  • Zhibin Ren; Ramesh Venugopal; Sebastien Goasguen; Supriyo Datta; Mark Lundstrom (2006), "nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs," http://nanohub.org/resources/1875.

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