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Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

By Carl R. Huster

Purdue University, West Lafayette, IN

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Abstract

For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation techniques based on better approximations to the Boltzmann transport equation, or on the Boltzmann transport equation itself. The Scattering Matrix Approach is one of the techniques that solves the Boltzmann transport equation. This thesis describes the extension of the Scattering Matrix Approach to two dimensions in real space and three dimensions in momentum space. The technique has been applied to number of model problems for verification, as well as realistic Si MOSFET's.

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Carl R. Huster received his PhD from Purdue University in May 2000.

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Researchers should cite this work as follows:

  • Carl R. Huster (2013), "Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S," http://nanohub.org/resources/18765.

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Purdue University, West Lafayette, IN

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