Computational and Experimental Study of Transport in Advanced Silicon Devices
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to standard models. In so doing, we will explain why the standard Drift-Diffusion model has been so prevalent and speculate about its prospect in the future. The physically detailed solutions were obtained using a deterministic Boltzmann solver which incorporates an effective acceleration technique, in order to speed up the solution time.
In connection with the MOSFET, we present a new theory, which calculates the upper-limit performance for a given CMOS technology. Using this theory, we assess the performance of a present technology by using experimental data and make predictions about the performance of future technologies. Finally, we will speculate on whether or not CMOS technology will be viable in the future.
Farzin Assad received his PhD from Purdue University in ay 2000
Researchers should cite this work as follows:
Purdue University, West Lafayette, IN