Support

Support Options

Submit a Support Ticket

 

Process Lab : Oxidation Flux

By Shuqing (Victor) Cao1, Yang Liu1, Peter Griffin1

1. Stanford University

Integrated Circuit Fabrication Process Simulation : Oxidation Flux

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1
Published on 22 Sep 2006
Latest version: 1.0. All versions

doi:10.4231/D3PC2T81W cite this

This tool is closed source.

Category

Tools

Published on

Abstract

The oxidation process is one of the most important processes in VLSI fabrication. It is implemented in processes such as the gate dielectric growth, the quality of which is extremely important for the scaling and performance of today's integrated circuit technology. This simulation tool integrates both the classic Deal-Grove's model and Massoud's model, which both describe the oxidation growth process. Specifically, this tool investigates the effect of different parameters and conditions on oxidation process by looking into the oxidation flux. It gives users the freedom to adjust critical parameters and conditions in the process, such as oxidant condition, time, initial oxide thickness, temperature, pressure, crystal orientation, as well as an opportunity to choose between the Deal-Grove's or Massoud's model, or a combination of both.

An oxidation concentration versus oxidation layer thickness figure is plotted almost instantaneously after the users specify the necessary parameters and conditions. The slope of the curve depicts the oxidation flux. The oxidation process is simulated after one click on the web interface, while all the complicated details and equation-solving procedures are hidden behind the scene. The interactive interface of the module and its simplicity of usage demonstrates the module's educational value in that it helps students and engineers build intuition into the oxidation process with minimum learning curve. Insightful comparison, such as one between thin and thick oxide growth, can be done easily. Moreover, the module can be used as a handy and efficient "oxidation flux calculator".

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.