NEEDS: Nano-Engineered Electronic Device Simulation Node
This resource belongs to the NEEDS: Nano-Engineered Electronic Device Simulation Node group.
Single-walled carbon nanotubes (CNTs) are among the most researched materials in the world. One of the foremost potential applications for CNTs is as the channel for next-generation transistors. While some of the CNT field-effect transistor (CNTFET) research community gave way to the rise of another carbon allotrope—graphene—in the mid-2000s, progress in the CNTFET field did not stop. In fact, in recent years the benefits of CNTFETs in a digital technology have become more evident and accessible; from the recent validation that a sub-10 nm CNT channel outperforms the best silicon competition to demonstrations of CNTFET circuits, including those on flexible and/or transparent substrates, with operating voltages as low as 0.4 V. In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered. By discussing the remaining obstacles and presenting recent progress toward addressing them, it is hoped that those in attendance may develop new ideas to contribute to overcoming these hurdles. Important considerations for next generation transistors from other materials will also be reviewed, revealing how different the road ahead is from the past. Overall, this talk should provide a reasonable overview of the CNT transistor field—where it has been, where it may go, and why more people should be along for the ride.
Researchers should cite this work as follows:
Birck Nanotechnology Building, Room 2001, Purdue University, West Lafayette, IN