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A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

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Cite this work

Researchers should cite this work as follows:

R. Venugopal, S. Goasguen, S. Datta, and M. S. Lundstrom, "A Quantum Mechanical Analysis of Channel Access, Geometry and Series Resistance in Nanoscale Transistors," J. Appl. Phys., 95, 292-305, 2004.
  • Ramesh Venugopal; Sebastien Goasguen; Supriyo Datta; Mark Lundstrom (2006), "A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors," http://nanohub.org/resources/1900.

Tags
  1. nanoelectronics 1
  2. nanotransistors 1
  3. NEGF 1

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