A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
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| Cite this work | Researchers should cite this work as follows: R. Venugopal, S. Goasguen, S. Datta, and M. S. Lundstrom, "A Quantum Mechanical Analysis of Channel Access, Geometry and Series Resistance in Nanoscale Transistors," J. Appl. Phys., 95, 292-305, 2004.
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