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A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

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Abstract

In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of scattering using a simple approximation inspired by Büttiker. It is based on an expansion of the device Hamiltonian in coupled mode-space. Simulation results are used to highlight quan- tum effects and discuss the importance of scattering when examining the transport properties of nanoscale transistors with differing channel access geometries. Additionally, an efficient domain decomposition scheme for evaluating the performance of nanoscale transistors is also presented. This paper highlights the importance of scattering in understanding the performance of transistors with different channel access geometries.

Cite this work

Researchers should cite this work as follows:

  • R. Venugopal, S. Goasguen, S. Datta, and M. S. Lundstrom, "A Quantum Mechanical Analysis of Channel Access, Geometry and Series Resistance in Nanoscale Transistors," J. Appl. Phys., 95, 292-305, 2004.
  • Ramesh Venugopal; Sebastien Goasguen; Supriyo Datta; Mark Lundstrom (2006), "A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors," http://nanohub.org/resources/1900.

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