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MVS 1.0.0 Nanotransistor Model (Silicon)

By Dimitri Antoniadis1, Shaloo Rakheja1

1. Massachusetts Institute of Technology (MIT)

Licensed according to this deed.

Published on

Abstract

A new Version of this resource has been released. Please see MVS Model.

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

Key References

A. Khakifirooz, O. M. Nayfeh, and D. A. Antoniadis, "A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters," IEEE Trans. Electron Dev., vol. 56, pp. 1674-1680, 2009. download

L. Wei, O. Mysore, and D. A. Antoniadis, "Virtual-Source Based Self-Consistent Current and Charge FET Models – From Ballistic to Drift-Diffusion Velocity-Saturation Operation," IEEE, Trans. Electron Dev., vol. 59, pp. 1263-1271, 2012.

Educational Resources

For a seminar on the essential physics that underlies the MVS model, see Mark Lundstrom's online Seminar: From Lilienfeld to Landauer: Understanding the nanoscale transistor

The virtual source model plays a central role in Mark Lundstrom's online course, "Nanoscale Transistors" , a 5-week short course available for free on nanoHUB-U.

Cite this work

Researchers should cite this work as follows:

  • Dimitri Antoniadis; Shaloo Rakheja (2013), "MVS 1.0.0 Nanotransistor Model (Silicon)," http://nanohub.org/resources/19223.

    BibTex | EndNote

Submitter

NEEDS Node

Purdue University

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