Support Options

Submit a Support Ticket

Home Groups Supriyo Datta Research Group Resources Papers Voltage Asymmetry of Spin-Transfer Torques About

Voltage Asymmetry of Spin-Transfer Torques

By Deepanjan Datta1, Behtash Behin-Aein2, Sayeef Salahuddin3, Supriyo Datta4

1. HGST 2. Global Foundries 3. UC Berkeley 4. Purdue University



Published on


Experimentally, it is seen that the free magnetic layer of a spin torque transfer (STT) device experiences a larger in-plane torque when a negative (rather than positive) voltage is applied to the fixed layer. This is surprising because magnets do not have any intrinsic asymmetry. In this paper, we 1) provide a simple physical explanation, based on the polarization of fixed layer in the energy range of transport; 2) extend it to explain the asymmetric bias dependence of out-of-plane torque as observed in some of the experiments; and 3) propose an asymmetric STT structure that can lead to a significant difference in the in-plane torques exerted on two contacts, even if they are identical. This effect 3 has not been observed to our knowledge and if demonstrated can find important applications.


IEEE Trans on Nanotechnology, vol. 11, pp. 261-272 (2012) doi: 10.1109/TNANO.2011.2163147

Cite this work

Researchers should cite this work as follows:

  • Deepanjan Datta; Behtash Behin-Aein; Sayeef Salahuddin; Supriyo Datta (2013), "Voltage Asymmetry of Spin-Transfer Torques,"

    BibTex | EndNote, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.