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Quantitative Model for TMR and Spin-transfer Torque in MTJ devices

By Deepanjan Datta1, Behtash Behin-Aein2, Sayeef Salahuddin1, Supriyo Datta1

1. Purdue University 2. Global Foundries



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We present a Non-Equilibrium Green's Function (NEGF)-based model for spin torque transfer (STT) devices which provides qualitative as well as quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque (τ||) and (4) out-of-plane torque (τ⊥) over a range of bias voltages, using a single set of three adjustable parameters. We believe our model is able to cover this diverse range of experiments.


Proceedings of Intl. Electron Devices Meeting, December 2010, pp. 548-551 doi:10.1109/EDM.2010.5703417, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.