| Abstract |
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
low bias transport can be nearly ballistic across distances of several hundred nanometers.
Deposition of high-κ gate insulators does not degrade the carrier mobility. The
conduction and valence bands are symmetric, which is advantageous for complementary
applications. The bandstructure is direct, which enables optical emission. Because of
these attractive features, carbon nanotubes are receiving much attention. In this work,
simulation approaches are developed and applied to understand carbon nanotube device
physics, and to explore device engineering issues for better transistor performance.
Carbon nanotube field-effect transistors (CNTFETs) provide a concrete context for
exploring device physics and developing a simulation capability. We have developed an
empirical (pz orbital) atomistic, quantum simulator for nanotube transistors. This
simulator uses the non-equilibrium Green's function (NEGF) formalism to treat ballistic
transport in the presence of self-consistent electrostatics. We also separately developed a
coupled Monte-Carlo/quantum injection simulator to understand carrier scattering in
CNTFETs.
Numerical simulations are used to understand device physics and to explore device
engineering issues. In chapter 4, we did a comprehensive study of the scaling behaviors
for ballistic SB CNTFETs. In chapter 5, we analyzed a short-channel, high-performance
CNTFET, to understand what controls and how to further improve the transistor
performance. In chapter 6, we explored the interesting role of phonon scattering in
CNTFETs. |
| Cite this work |
Researchers should cite this work as follows:
Jing Guo, Ph. D., Purdue University, August, 2004. Carbon Nanotube Electronics:
Modeling, Physics, and Applications. Major Professor: Mark Lundstrom. -
Jing Guo (2006), "Carbon Nanotube Electronics: Modeling, Physics, and Applications," http://nanohub.org/resources/1928.
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