NEEDS: Nano-Engineered Electronic Device Simulation Node
This resource belongs to the NEEDS: Nano-Engineered Electronic Device Simulation Node group.
For the past 40 years, the semiconductor industry has been dominated by Moore’s Law scaling of CMOS.
- Technology trend has been highly predictable
- Scaling has been so fast that technology innovations have not been possible. They have been run over by CMOS.
- Industry trends have been driven by technology (scaling), not by societal needs.
However, CMOS scaling will end in this decade. The Era of Moore’s Law scaling will give way to the Era of Accelerated Technology Innovation (ATI).
- Cost of high-speed computation will stagnate. Future progress will be driven by design.
- Differentiated process technology will become a competitive advantage.
- CMOS will provide a stable platform on which innovative technologies will be integrated.
- Technology innovations will be driven by the needs of society.
- Technology innovation will become more diverse and less predictable.
Dennis Buss began his industrial career at Texas Instruments in July 1969. He was elected TI Fellow in 1978 and, in 1980, he was appointed Vice President and Director of TI's Semiconductor Process and Design Center. Between 1987 and 1997, he was VP of Technology at Analog Devices. He returned to Texas Instruments in 1997 as VP of Si Technology Development. In Nov 2007, Dennis became TI Chief Scientist and Visiting Scientist at MIT with responsibility for managing joint research between TI and MIT. In April 2010, he retired from TI, but he continues this role as a consultant to TI.
Dennis received his BS, MS and Ph.D. in Electrical Engineering from MIT and served twice on the EE faculty at MIT. He is an IEEE Fellow and the recipient of the 1985 Herschel Award and the 1987 Jack A. Morton Award for his pioneering work on HgCdTe Infra-Red monolithic focal plane technology. In February 2000, Dennis was selected by the Electron Devices Society to receive the IEEE Third Millennium Medal. His current research is in Ultra-Low Power Electronics.
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