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MVS 1.0.1 Nanotransistor Model (Silicon)

By Shaloo Rakheja1, Dimitri Antoniadis1

1. Massachusetts Institute of Technology (MIT)

NEEDS: Nano-Engineered Electronic Device Simulation Node

Published on


The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

Model Release Components:

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Key References

A. Khakifirooz, O. M. Nayfeh, and D. A. Antoniadis, "A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters," IEEE Trans. Electron Dev., vol. 56, pp. 1674-1680, 2009. download

L. Wei, O. Mysore, and D. A. Antoniadis, "Virtual-Source Based Self-Consistent Current and Charge FET Models – From Ballistic to Drift-Diffusion Velocity-Saturation Operation," IEEE, Trans. Electron Dev., vol. 59, pp. 1263-1271, 2012.

Mark S. Lundstrom and Dimitri A. Antoniadis, “Compact Models and the Physics of Nanoscale FETs,” IEEE Trans. Electron Devices, Vol. 99, pp. 225-233, 2014.

Educational Resources

For a seminar on the essential physics that underlies the MVS model, see Mark Lundstrom's online Seminar: From Lilienfeld to Landauer: Understanding the nanoscale transistor

The virtual source model plays a central role in Mark Lundstrom's online course, "Nanoscale Transistors" , a 5-week short course available for free on nanoHUB-U.

Cite this work

Researchers should cite this work as follows:

  • Shaloo Rakheja; Dimitri Antoniadis (2013), "MVS 1.0.1 Nanotransistor Model (Silicon) ,"

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