NEEDS: Nano-Engineered Electronic Device Simulation Node
This resource belongs to the NEEDS: Nano-Engineered Electronic Device Simulation Node group.
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
Model Release Components:
- MVS Model 1.0.1 in Verilog-A*
- MVS Model Circuit Simulation Benchmarks
- MVS Model Exerciser in MATLAB
- MVS Model Parameter Extractor in MATLAB
- MVS Model Manual
- Experimental Data from Intel 32 nm and 45 nm N-type devices
- Details of changes in this version The model release components are licensed under a modified CMC license.
A. Khakifirooz, O. M. Nayfeh, and D. A. Antoniadis, "A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters," IEEE Trans. Electron Dev., vol. 56, pp. 1674-1680, 2009. download
L. Wei, O. Mysore, and D. A. Antoniadis, "Virtual-Source Based Self-Consistent Current and Charge FET Models – From Ballistic to Drift-Diffusion Velocity-Saturation Operation," IEEE, Trans. Electron Dev., vol. 59, pp. 1263-1271, 2012.
Mark S. Lundstrom and Dimitri A. Antoniadis, “Compact Models and the Physics of Nanoscale FETs,” IEEE Trans. Electron Devices, Vol. 99, pp. 225-233, 2014.
For a seminar on the essential physics that underlies the MVS model, see Mark Lundstrom's online Seminar: From Lilienfeld to Landauer: Understanding the nanoscale transistor
The virtual source model plays a central role in Mark Lundstrom's online course, "Nanoscale Transistors" , a 5-week short course available for free on nanoHUB-U.