Support

Support Options

Submit a Support Ticket

 

MVS 1.0.1 Nanotransistor Model (Silicon)

By Shaloo Rakheja1, Dimitri Antoniadis1

1. Massachusetts Institute of Technology (MIT)

NEEDS: Nano-Engineered Electronic Device Simulation Node

Published on

Abstract

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

Model Release Components:

Key References

A. Khakifirooz, O. M. Nayfeh, and D. A. Antoniadis, "A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters," IEEE Trans. Electron Dev., vol. 56, pp. 1674-1680, 2009. download

L. Wei, O. Mysore, and D. A. Antoniadis, "Virtual-Source Based Self-Consistent Current and Charge FET Models – From Ballistic to Drift-Diffusion Velocity-Saturation Operation," IEEE, Trans. Electron Dev., vol. 59, pp. 1263-1271, 2012.

Educational Resources

For a seminar on the essential physics that underlies the MVS model, see Mark Lundstrom's online Seminar: From Lilienfeld to Landauer: Understanding the nanoscale transistor

The virtual source model plays a central role in Mark Lundstrom's online course, "Nanoscale Transistors" , a 5-week short course available for free on nanoHUB-U.

Cite this work

Researchers should cite this work as follows:

  • Shaloo Rakheja; Dimitri Antoniadis (2013), "MVS 1.0.1 Nanotransistor Model (Silicon) ," http://nanohub.org/resources/19684.

    BibTex | EndNote

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.