MOSCNT: code for carbon nanotube transistor simulation
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped …
| Abstract | Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green's function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that this code does NOT treat Schottky-barrier CNTFETs. Additional information on the device geometry and the simulation procedure is described in [1]. The code can readily simulate band-to-band tunneling in CNT-MOSFETs, as well as p-i-n type device architectures, by appropriately modifying the source/drain doping conditions [2,3]. For the explanation of the simulation procedure, see the article "Towards Multiscale Modeling of Carbon Nanotube Transistors," by Guo, Datta, Lundstrom, and Anantram. Please report bugs to Siyu Koswatta . |
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| Credits | Originally created by Jing Guo (Purdue University), 2003. Revised by Siyu Koswatta (Purdue University) and Dmitri Nikonov (Intel), 2004. Copyright of all codes contained in this archive by Purdue Research Foundation, 2003. See attached license which governs distribution, copying and modification. |
| Cite this work | Researchers should cite this work as follows:
Please cite the following publications when using this code to obtain any results you intend to publish: |
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