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MOSCNT: code for carbon nanotube transistor simulation

By Siyu Koswatta1, Jing Guo2, Dmitri Nikonov3

1. IBM; 2. University of Florida; 3. Intel Corporation;

Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped …

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