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MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0

By Ujwal Radhakrishna, Dimitri Antoniadis1

1. Massachusetts Institute of Technology (MIT)

NEEDS: Nano-Engineered Electronic Device Simulation Node

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Abstract

The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

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Key References

Radhakrishna, U.; Lan Wei; Dong-Seup Lee; Palacios, T.; Antoniadis, D., "Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection," Electron Devices Meeting (IEDM), 2012 IEEE International, 10-13 Dec. 2012, doi: 10.1109/IEDM.2012.6479038.

Ujwal Radhakrisna, "A Compact Transport and Charge Model for GaN-based High Electron Mobility Transistors for RF applications," Masters Thesis, Massachusetts Institute of Technology, June 2013.

U. Radhakrishna, D. Piedra, Y. Zhang, T. Palacios, D. Antoniadis, "High Voltage GaN HEMTs Compact Model: Experimental Verification, Field Plate Optimization and Charge Trapping," Electron Devices Meeting (IEDM), 2013 IEEE International, 9-11, 2013.

Cite this work

Researchers should cite this work as follows:

  • Ujwal Radhakrishna; Dimitri Antoniadis (2014), "MIT Virtual Source GaNFET-RF ( MVSG-RF) Model 1.0.0," http://nanohub.org/resources/20144.

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