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3-D Quantum Transport Modeling (MIND Review: Band-to-band-tunneling transistors status report August 2010)

By Gerhard Klimeck1, Mathieu Luisier1

1. Purdue University

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Abstract

This presentation provides an overview of the OMEN transport capabilities for Band to band tunneling field effect transistors (TFETs) as of August 2010. The material was presented originally at the MIND review at Notre Dame on Aug. 17, 2010. The presentation motivates the work on the U.S. Patent 12858465 "Tunneling field-effect transistor with low leakage current" by Mathieu Luisier, Samarth Agarwal, Gerhard Klimeck. Specifically the presentation shows that thick body TFETs loose gate control in the OFF bias and therefore suffer from large leakage. One solution to this problem is patented.

This presentation is supplemental material to:

Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Mathieu Luisier (2014), "3-D Quantum Transport Modeling (MIND Review: Band-to-band-tunneling transistors status report August 2010)," http://nanohub.org/resources/20169.

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