This presentation provides an overview of the OMEN transport capabilities for Band to band tunneling field effect transistors (TFETs) as of August 2010. The material was presented originally at the MIND review at Notre Dame on Aug. 17, 2010. The presentation motivates the work on the U.S. Patent 12858465 "Tunneling field-effect transistor with low leakage current" by Mathieu Luisier, Samarth Agarwal, Gerhard Klimeck. Specifically the presentation shows that thick body TFETs loose gate control in the OFF bias and therefore suffer from large leakage. One solution to this problem is patented.
This presentation is supplemental material to: