In this talk, the deposition of dense arrays of CdTe/CdS photodiodes, via close-spaced sublimation, is presented for the first time. The previously reported ordered polycrystalline method was used to fabricate the photodiode arrays with the feature size ranging from 1 to 2 micrometers on a pitch of 2 to 4 microns, respectively. Reactor conditions that yielded selective-area deposition and greatly reduced deposition rates of CdTe were developed and optimized to increase the grain size and concomitantly reduce the number of CdTe nuclei within each photodiode. The effects of grain size on electrical characteristics are presented. The growth evolution and selectivity were studied using scanning electron microscopy, atomic force microscopy and x-ray diffraction. A model that describes the selective-area deposition of CdTe via close-spaced sublimation is presented. The experimental results and model are general and could be applied to other polycrystalline film materials.
This is the first contribution from the students in the University of Texas at El Paso Molecular Electronics course given in the fall of 2006.
Arev Escobedo is in his second year in the Electrical Engineering master’s program. As part of his master’s studies, Arev will be doing an internship at Texas Instruments in 2007. He received his bachelor’s degree at UTEP in Dec. 2005. He is a native of the cities of El Paso/Ciudad Juarez.
Arev Escobedo, Mario Rodríguez, Luís Romo, Jose Cruz-Campa, Cesar López, Sandra Oyer, Scott Rogers1, Stella Quiñónez, and David Zubía of the Department of Electrical and Computer Engineering and John McClure of the Department of Metallurgy and Materials Engineering at UTEP
Cite this work
Researchers should cite this work as follows:
Arev Gabriel Escobedo (2006), "CdTe/CdS-BASED PHOTODIODE ARRAYS VIA SELECTIVE-AREA, CLOSE-SPACED SUBLIMATION," http://nanohub.org/resources/2078.