This talk presents the latest results of the CMOS Resonant Body Transistor (RBT) fabricated in standard 32nm SOI CMOS. Using phononic crystals formed from the CMOS stack, we will discuss methods for 10x improvement of Q and suppression of spurious modes. Both the experimental work on the device (funded by the Global Research Corporation) and the compact modeling of the device (funded by NSF and SRC throug h the NEEDS initiative) are discussed.
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