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Design and Compact Modeling of CMOS-MEMS Resonant Body Transistors

By Dana Weinstein1, Luca Daniel1, Bichoy W. Bahr2

1. Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, MA 2. HybridMEMS Group, Massachusetts Institute of Technology (MIT), Cambridge, MA

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This talk presents the latest results of the CMOS Resonant Body Transistor (RBT) fabricated in standard 32nm SOI CMOS. Using phononic crystals formed from the CMOS stack, we will discuss methods for 10x improvement of Q and suppression of spurious modes. Both the experimental work on the device (funded by the Global Research Corporation) and the compact modeling of the device (funded by NSF and SRC throug h the NEEDS initiative) are discussed.

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Time, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.