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Phonon is the main carrier of heat in small scale electronic devices. 1dphononbte is a tool that can simulate heat transport in thin film of different lengths and different simulation times. Boltzmann transport equation (BTE) is solved in one dimensional (D1Q3) lattice by using lattice Boltzmann method (LBM) to obtain the temperature profile of the thin film. The temperature profile explains how the temperature changes through the entire length of the thin film. Unlike Fourier law, BTE can capture the ballistic effect of phonon transport.
There are two modes of operation for this tool. The first mode is constant temperature boundary condition, in which the left side of the thin film is set at a constant temperature Tleft and the right side of the thin film is set at a constant temperature Tright where Tleft > Tright. The first mode demonstrate how the heat transport from the left side to the right side of the thin film. The second mode is hotspot in simplified silicon-on-insulator (SOI) device that demonstrate how the heat spreads from the hotspot in the middle of the device to the entire length of the device.
The inputs to the tool are the acoustic length of the thin film (thin film length / phonon mean free path), the simulation time, and the hotspot width (only for the second mode).
Network for Computational Nanotechnology (NCN), Purdue University
R.A. Escobar, S.S. Ghai, M.S. Jhon, C.H. Amon, Multi-length and time scale thermal transport using the lattice Boltzmann method with application to electronics cooling, International Journal of Heat and Mass Transfer, 49 (2006) 97-107
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