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In CdTe devices, Cu is most commonly used to achieve p-type absorber doping and low-resistance electrical contact. Since Cu exists both in the form of interstitial donors and substitutional acceptors, the amount of uncompensated acceptor impurities could be orders of magnitude smaller than the total atomic concentration of Cu. Due to the fast diffusion rates of interstitials, this gentle balance between mutually compensating impurities could be subject to temporal changes causing metastabilities that are observed in devices with high Cu concentrations. In this work, we present 1D finite difference simulations of Cu kinetics in CdTe absorber to investigate its role in the observed metastabilities of CdTe solar cells.
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