[Illinois] Atomic Engineering of III-V Semiconductor for Quantum Devices, from Deep UV (200 nm) to THZ (300 microns)

By Manijeh Razeghi

Northwestern University

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Nature offers us different kinds of atoms. But it takes human intelligence to put different atoms together in an elegant way in order to realize manmade structures that is lacking in nature. This is especially true in III-V semiconductor material systems. Guided by highly accurate atomic band structure simulation, modern semiconductor optoelectronic devices are literally made atom by atom using advanced growth technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD). Recent breakthroughs have brought such quantum engineering to an unprecedented level, covering an extremely wide spectral range from 200 nm to 300 μm. On the short wavelength side of the electromagnetic spectrum, we have demonstrated III-nitride light emitting diode emitting in deep ultraviolet to visible. In the infrared, quantum cascade lasers (QCLs), and focal plane arrays (FPAs) based on quantum-dot (QD) or type-II superlattice (T2SL) are becoming the choice of technology in crucial applications such as environmental monitoring and space exploration. Last but not the least, on the far-infrared side of the electromagnetic spectrum, also known as the terahertz (THz) region, III-V semiconductor offers a unique solution of generating THz waves in a compact device at room temperature. Continuous effort is being devoted to all of the above mentioned areas with the intention to develop smart technologies that meets the current challenges in environment, health, security, and energy. In this talk, the latest advances in III-V semiconductor optoelectronic devices at the Center for Quantum Devices, Northwestern University, will be presented.


Manijeh Razeghi received the Doctorat d'État es Sciences Physiques from the Université de Paris, France, in 1980. After heading the Exploratory Materials Lab at Thomson-CSF (France), she joined Northwestern University, Evanston, IL, as a Walter P. Murphy Professor and Director of the Center for Quantum Devices in Fall 1991, where she created the undergraduate and graduate program in solid-state engineering.  She is one of the leading scientists in the field of semiconductor science and technology, pioneering in the development and implementation of major modern epitaxial techniques such as MOCVD, VPE, gas MBE, and MOMBE for the growth of entire compositional ranges of III-V compound semiconductors.  She is on the editorial board of many journals such as Journal of Nanotechnology, and Journal of Nanoscience and Nanotechnology, an Associate Editor of Opto-Electronics Review.   She is on the International Advisory Board for the Polish Committee of Science, and is an Adjunct Professor at the College of Optical Sciences of the University of Arizona, Tucson, AZ.  Dr. Razeghi is a Fellow of MRS, IOP, IEEE, APS, SPIE, OSA, Fellow and Life Member of Society of Women Engineers (SWE), Fellow of the International Engineering Consortium (IEC), and a member of the Electrochemical Society, ACS, AAAS, and the French Academy of Sciences and Technology. She has authored or co-authored more than 1000 papers, more than 30 chapters, and 18 books.  

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Researchers should cite this work as follows:

  • Manijeh Razeghi (2015), "[Illinois] Atomic Engineering of III-V Semiconductor for Quantum Devices, from Deep UV (200 nm) to THZ (300 microns)," http://nanohub.org/resources/21986.

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